Skip to main content
Back

IEC 62047-9:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

General information

Valid from 13.07.2011
Directives or regulations
None

Standard history

Status
Date
Type
Name
08.03.2012
Corrigendum
13.07.2011
Main
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters.

The contents of the corrigendum of March 2012 have been included in this copy.

Required fields are indicated with *

*
*
*
PDF
213.43 € incl tax
Paper
213.43 € incl tax
Standard monitoring