Tagasi

IEC 60747-8:2010+AMD1:2021 CSV

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Üldinfo
Kehtiv alates 25.06.2021
Tegevusala (ICS grupid)
31.080.30 Transistorid
Direktiivid või määrused
puuduvad

Standardi ajalugu

Staatus
Kuupäev
Tüüp
Nimetus
25.06.2021
Põhitekst
IEC 60747-8:2010+A1:2021 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
*
*
*
PDF
635,90 € koos KM-ga
Standardi monitooring

Teised on ostnud veel

Põhitekst

IEC 60747-3:2013

Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
Uusim versioon Kehtiv alates 09.07.2013
Põhitekst

EVS-EN 61082-1:2015

Preparation of documents used in electrotechnology - Part 1: Rules
Uusim versioon Kehtiv alates 04.03.2015
Põhitekst

IEC 60747-2:2016

Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
Uusim versioon Kehtiv alates 13.04.2016
Põhitekst

IEC 60747-1:2006+AMD1:2010 CSV

Semiconductor devices - Part 1: General
Uusim versioon Kehtiv alates 23.08.2010