Back

IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

General information
Valid from 13.11.2019
Directives or regulations
None
Standard history
Status
Date
Type
Name
13.11.2019
Main
26.09.2007
Main
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: - reverse-blocking IGBT and its related technical contents have been added; - reverse-conducting IGBT and its related technical contents have been added; - some parts of the previous edition have been amended, combined or deleted.
*
*
*
PDF
344.45 € incl tax
Standard monitoring