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IEC 62739-2:2016

Test method for erosion of wave soldering equipment using molten lead-free solder alloy - Part 2: Erosion test method for metal materials with surface processing

General information
Valid from 13.07.2016
ICS Groups
31.190 Electronic component assemblies 31.240 Mechanical structures for electronic equipment
Directives or regulations
None

Standard history

Status
Date
Type
Name
13.07.2016
Main
IEC 62739-2:2016
IEC 62739-2:2016 provides an evaluating test method for the erosion of the metallic materials with surface processing intended to be used for lead-free wave soldering equipment as a solder bath and other components which are in contact with the molten solder. It aims at prevention of an accident or a fire by predicting a setup and life of a suitable maintenance cycle.
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PDF
104.90 € incl tax
Paper
104.90 € incl tax
Standard monitoring
English

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Standards designation

EVS Estonian standard
EN European standard (published by an CEN or CENELEC)
EN ISO International standard adopted as an European standard
ISO International Organization for Standardization’s standard
IEC International Electrotechnical Commission’s standard
HD CENELEC’s harmonisation document
   
EVS-EN European standard implemented in Estonia
EVS-EN ISO International standard adopted in Europe and implemented in Estonia
EVS-EN ISO/IEC International standard/International electrotechnical standard adopted in Europe and implemented in Estonia
EVS-IEC International electrotechnical standard implemented in Estonia
EVS-ISO International standard implemented in Estonia
   
A, AMD amedment
+A a full standard plus the amendment
/A only amendment
COR, AC corrigendum
+COR a full standard plus the corrigendum
NA national annex
+NA a full standard plus the national annex
/NA only national annex
TS technical specification
TR technical report
CWA agreement, developed by a CEN or CENELEC
prEVS-EN (etc) draft standard
   
et the standard is in Estonian only
en the standard is in English only
et-en the standard is in Parallel text Estonian-English

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