Back

ISO 21466:2019

Microbeam analysis -- Scanning electron microscopy -- Method for evaluating critical dimensions by CD-SEM

General information
Valid from 13.12.2019
Directives or regulations
None
Standard history
Status
Date
Type
Name
13.12.2019
Main
This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.
*
*
*
PDF
175.56 € incl tax
Paper
175.56 € incl tax
Standard monitoring