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prEN IEC 63275-2:2021

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

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IEC 63275-2:202X; prEN IEC 63275-2:2021
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None
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Date
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This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
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