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prEN IEC 63284:2021

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

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Draft
Base Documents
IEC 63284:202X; prEN IEC 63284:2021
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None
Standard history
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Date
Type
Name
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of Gallium Nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
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