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IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

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Kehtiv alates 13.11.2019
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13.11.2019
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26.09.2007
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IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: - reverse-blocking IGBT and its related technical contents have been added; - reverse-conducting IGBT and its related technical contents have been added; - some parts of the previous edition have been amended, combined or deleted.
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