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ISO 23812:2009

Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth calibration for silicon using multiple delta-layer reference materials

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Kehtiv alates 08.04.2009
Tegevusala (ICS grupid)
71.040.40 Keemiline analüüs
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Tüüp
Nimetus
08.04.2009
Põhitekst
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
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