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EVS-EN 62047-14:2012

Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials

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Kehtiv alates 03.05.2012
Alusdokumendid
IEC 62047-14:2012; EN 62047-14:2012
Tegevusala (ICS grupid)
31.080.99 Muud pooljuhtseadised
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Standardi ajalugu

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Nimetus
03.05.2012
Põhitekst
This part of IEC 62047 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described herein are typically used in electric components, MEMS and microdevices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.

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EVS-EN 62047-17:2015

Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
Uusim versioon Kehtiv alates 05.08.2015
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EVS-EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods
Uusim versioon Kehtiv alates 05.08.2015
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EVS-EN 62047-11:2013

Semiconductor devices - Micro-electromechanical devices -- Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
Uusim versioon Kehtiv alates 14.11.2013
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EVS-EN 62047-18:2013

Semiconductor devices - Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
Uusim versioon Kehtiv alates 14.11.2013