Skip to main content
Back

EVS-EN 62047-11:2013

Semiconductor devices - Micro-electromechanical devices -- Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

General information

Valid from 14.11.2013
Base Documents
IEC 62047-11:2013; EN 62047-11:2013
Directives or regulations
None

Standard history

Status
Date
Type
Name
14.11.2013
Main
IEC 62047-11:2013 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic, ceramic, polymeric, etc.) micro-electro-mechanical system (MEMS) materials with length between 0,1 mm and 1 mm and width between 10 micrometre and 1 mm and thickness between 0,1 micrometre and 1 mm, which are main structural materials used for MEMS, micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room temperature to 30 % of a material's melting temperature.

Required fields are indicated with *

*
*
*
PDF
19.52 € incl tax
Paper
19.52 € incl tax
Browse standard from 2.44 € incl tax
Standard monitoring

Customers who bought this item also bought

Main

EVS-EN 62047-17:2015

Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
Newest version Valid from 05.08.2015
Main

EVS-EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods
Newest version Valid from 05.08.2015
Main

EVS-EN 62047-18:2013

Semiconductor devices - Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
Newest version Valid from 14.11.2013
Main

EVS-EN 62047-19:2013

Semiconductor devices - Micro-electromechanical devices -- Part 19: Electronic compasses
Newest version Valid from 14.11.2013