EVS-EN 60749-18:2003

Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source.  Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects.  It is intended for military- and space-related applications