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EVS-EN 60749-18:2003

Semiconductor devices Mechanical and climatic test methods Part 18: Ionizing radiation (total dose)

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Kehtetu alates 17.06.2019
Alusdokumendid
IEC 60749-18:2003; EN 60749-18:2003
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Standardi ajalugu

Staatus
Kuupäev
Tüüp
Nimetus
17.06.2019
Põhitekst
01.06.2003
Põhitekst
Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source.  Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects.  It is intended for military- and space-related applications
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