Skip to main content
Back

IEC 63284:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

General information

Valid from 21.04.2022
Directives or regulations
None

Standard history

Status
Date
Type
Name
21.04.2022
Main
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

Required fields are indicated with *

*
*
*
PDF
104.90 € incl tax
Paper
104.90 € incl tax
Standard monitoring