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EVS-EN IEC 60749-26:2018

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

Üldinfo
Kehtiv alates 02.04.2018
Alusdokumendid
IEC 60749-26:2018; EN IEC 60749-26:2018
Direktiivid või määrused
puuduvad
Standardi ajalugu
Staatus
Kuupäev
Tüüp
Nimetus
02.04.2018
Põhitekst
01.07.2014
Põhitekst
IEC 60749-26:2018 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected. This fourth edition cancels and replaces the third edition published in 2013. This edition constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-2014. It is used with permission of the copyright holders, ESD Association and JEDEC Solid state Technology Association. This edition includes the following significant technical changes with respect to the previous edition: a)   a new subclause relating to HBM stressing with a low parasitic simulator is added, together with a test to determine if an HBM simulator is a low parasitic simulator; b)   a new subclause is added for cloned non-supply pins and a new annex is added for testing cloned non-supply pins.
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