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EVS-EN 62417:2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

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Kehtiv alates 07.06.2010
Alusdokumendid
IEC 62417:2010; EN 62417:2010
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Staatus
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Tüüp
Nimetus
07.06.2010
Põhitekst
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
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EVS-EN ISO 7010:2020+A1+A2+A3+A4+A5+A6:2023

Graphical symbols - Safety colours and safety signs - Registered safety signs (ISO 7010:2019, Corrected version 2020-06 + ISO 7010:2019/Amd 1:2020 + ISO 7010:2019/Amd 2:2020 + ISO 7010:2019/Amd 3:2021 + ISO 7010:2019/Amd 4:2021 + ISO 7010:2019/Amd 5:2022 + ISO 7010:2019/Amd 6:2022)
Uusim versioon Kehtiv alates 02.05.2023