Tagasi

IEC 63275-1:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Üldinfo
Kehtiv alates 21.04.2022
Tegevusala (ICS grupid)
31.080.30 Transistorid
Direktiivid või määrused
puuduvad
Standardi ajalugu
Staatus
Kuupäev
Tüüp
Nimetus
21.04.2022
Põhitekst
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
*
*
*
PDF
80,99 € koos KM-ga
Paber
80,99 € koos KM-ga
Standardi monitooring