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EVS-EN 60749-34:2004

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

General information
Withdrawn from 05.01.2011
Base Documents
IEC 60749-34:2004; EN 60749-34:2004
ICS Groups
31.080 Semiconductor devices
Directives or regulations
None

Standard history

Status
Date
Type
Name
05.01.2011
Main
EVS-EN 60749-34:2010
Main
EVS-EN 60749-34:2004
Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.
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English

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Standards designation

EVS Estonian standard
EN European standard (published by an CEN or CENELEC)
EN ISO International standard adopted as an European standard
ISO International Organization for Standardization’s standard
IEC International Electrotechnical Commission’s standard
HD CENELEC’s harmonisation document
   
EVS-EN European standard implemented in Estonia
EVS-EN ISO International standard adopted in Europe and implemented in Estonia
EVS-EN ISO/IEC International standard/International electrotechnical standard adopted in Europe and implemented in Estonia
EVS-IEC International electrotechnical standard implemented in Estonia
EVS-ISO International standard implemented in Estonia
   
A, AMD amedment
+A a full standard plus the amendment
/A only amendment
COR, AC corrigendum
+COR a full standard plus the corrigendum
NA national annex
+NA a full standard plus the national annex
/NA only national annex
TS technical specification
TR technical report
CWA agreement, developed by a CEN or CENELEC
prEVS-EN (etc) draft standard
   
et the standard is in Estonian only
en the standard is in English only
et-en the standard is in Parallel text Estonian-English

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