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EVS-EN 60749-6:2017

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

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Kehtiv alates 05.07.2017
Alusdokumendid
IEC 60749-6:2017; EN 60749-6:2017
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Standardi ajalugu
Staatus
Kuupäev
Tüüp
Nimetus
05.07.2017
Põhitekst
01.03.2003
Põhitekst
IEC 60749-6:2017(E) is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43. This edition includes the following significant technical changes with respect to the previous edition: a) additional test conditions; b) clarification of the applicability of test conditions.
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