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EVS-EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

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Kehtiv alates 05.08.2015
Alusdokumendid
IEC 62047-16:2015; EN 62047-16:2015
Tegevusala (ICS grupid)
31.080.99 Muud pooljuhtseadised
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05.08.2015
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This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate
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EVS-EN 62047-17:2015

Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
Uusim versioon Kehtiv alates 05.08.2015
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EVS-EN 62047-11:2013

Semiconductor devices - Micro-electromechanical devices -- Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
Uusim versioon Kehtiv alates 14.11.2013
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EVS-EN 62047-18:2013

Semiconductor devices - Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
Uusim versioon Kehtiv alates 14.11.2013
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EVS-EN 62047-19:2013

Semiconductor devices - Micro-electromechanical devices -- Part 19: Electronic compasses
Uusim versioon Kehtiv alates 14.11.2013