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EVS-EN IEC 60749-23:2026

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

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Kehtiv alates 16.02.2026
Alusdokumendid
EN IEC 60749-23:2026; IEC 60749-23:2025
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Standardi ajalugu

Staatus
Kuupäev
Tüüp
Nimetus
16.02.2026
Põhitekst
05.04.2011
Muudatus
09.07.2004
Põhitekst
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.

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